Fabrication and characterization of carbon nanofiber-based vertically integrated Schottky barrier junction diodes
Xiaojing Yang, Michael A. Guillorn, Derek Austin, Anatoli V. Melechko, Hongtao Cui, Harry M. Meyer III, Vladimir I. Merkulov, J. B. O. Caughman, Douglas H. Lowndes, and Michael L. Simpson
Abstract:
We report on the fabrication and electrical characterization of active nanoscale electronic devices using single vertically aligned carbon nanofibers (VACNFs). A rectifying behavior consistent with a 0.3 eV Schottky barrier was found. Experimental results indicate that a region of semiconducting SiC is formed directly beneath the VACNF during the growth process, creating the Schottky-barrier junction between this semiconductor material and the metallic carbon nanofibers.
http://pubs.acs.org/cgi-bin/article.cgi/nalefd/2003/3/i12/pdf/nl0346631.pdf
