Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication

Seung-Ik Jun, Philip D. Rack, Timothy E. McKnight, Anatoli V. Melechko, Michael L. Simpson,

Appl. Phys. 132108 (2005)

The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film. ©2005 American Institute of Physics

 

This article appeared in Appl. Phys. Lett. 87, 132108 (2005) (3 pages) and may be found at (URL/link for published article abstract).

Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.