Characterisation of reactively sputtered silicon oxide for thin-film transistor fabrication

Jun, S.-I., T.E. McKnight, A. V. Melechko, M. L. Simpson, P. D. Rack.,
Electron. Letts. 41 (14), July 7, 2005, 59-60

To overcome deficiencies of sputtered silicon dioxide (SiO2) films the RF magnetron sputtering process was optimised using a full factorial design of experiment. The optimised SiO2 film has a 5.7 MV=cm breakdown field and a 6.2 nm=min deposition rate at 10 W=cm2 RF power, 3 mTorr pressure, 300
C substrate temperature, and 56 V substrate bias. Thin-film transistors were also fabricated and characterised to show potential and prospective applications of the optimised SiO2 films.