Fabrication and characterization of carbon nanofiber-based vertically integrated Schottky barrier junction diodes
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    Jouranal articles		 Xiaojing Yang, Michael A. Guillorn, Derek Austin, Anatoli V. Melechko, Hongtao Cui, Harry M. Meyer III, Vladimir I. Merkulov, J. B. O. Caughman,# Douglas H. Lowndes, and Michael L. Simpson*

Molecular-Scale Engineering and Nanoscale Technologies Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6006, Materials Science and Engineering Department, the University of Tennessee, Electrical and Computer Engineering Department, the University of Tennessee, Nanostructured and Thin-Film Materials Physics Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, and Fusion Energy Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831

Received August 15, 2003

Revised October 31, 2003

Abstract:

We report on the fabrication and electrical characterization of active nanoscale electronic devices using single vertically aligned carbon nanofibers (VACNFs). A rectifying behavior consistent with a 0.3 eV Schottky barrier was found. Experimental results indicate that a region of semiconducting SiC is formed directly beneath the VACNF during the growth process, creating the Schottky-barrier junction between this semiconductor material and the metallic carbon nanofibers.

URL:http://pubs.acs.org/cgi-bin/abstract.cgi/nalefd/2003/3/i12/abs/nl0346631.html

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