Self-aligned gated field emission devices using single carbon nanofiber cathodes
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 The following article appeared in Applied Physics Letters, 2002. 81(19): p. 3660-3662. and may be found at (URL/link for published article abstract).

(full text pdf)

Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

M. A. Guillorn, A. V. Melechko, V. I. Merkulov, D. K. Hensley, and M. L. Simpson
Molecular-Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
D. H. Lowndes
Thin Film and Nanostructured Materials Physics Research Group, Solid State Division, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831

 

(Received 25 April 2002; accepted 6 September 2002)

We report on the fabrication and operation of integrated gated field emission devices using single vertically aligned carbon nanofiber (VACNF) cathodes where the gate aperture has been formed using a self-aligned technique based on chemical mechanical polishing. We find that this method for producing gated cathode devices easily achieves structures with gate apertures on the order of 2 µm that show good concentric alignment to the VACNF emitter. The operation of these devices was explored and field emission characteristics that fit well to the Fowler–Nordheim model of emission was demonstrated. ©2002 American Institute of Physics.