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- A. V. Melechko1, M. V. Simkin1*, N. F.
Samatova2, J. Braun1§, and E. W. Plummer1
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- 1Department
of Physics and Astronomy, The University of Tennessee, Knoxville,
Tennessee 37996Solid State Division, Oak Ridge National Laboratory,
Oak Ridge, Tennessee 37831
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- 2Computer
Science and Mathematics Division, Oak Ridge National Laboratory, Oak
Ridge, Tennessee 37831
Received 20 May 2001; published 29 November 2001
A complex phase transition in Sn/Ge(111) and similar
systems can be decomposed into two intertwined phase transitions: a
structural symmetry lowering (sqrt[3] x sqrt[3])⇔(3
x
3) transition and a disorder-order transition in the defect
distribution. We present two phenomenological models that describe these
transitions and their interrelation. These models allow us to understand
the formation of domains and domain walls at low temperatures,
defect-induced density waves above the structural transition
temperature, and ordering of the defects caused by lattice-mediated
defect-defect interactions. The models predict a destruction of the pure
structural transition when impurities are introduced into the system, a
shift in the structural crossover temperature with impurity density, and
a dependence of the (3 x 3) lattice structure on the specific
defect alignment.
©2001 The American Physical Society
URL:
http://link.aps.org/abstract/PRB/v64/e235424 |
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