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Defect-mediated condensation of a charge density wave
Science, 1999. 285(5436): p. 2107-2110
Full text access (subscription)
Hanno H. Weitering,
12 Joseph M. Carpinelli, 12 Anatoli V. Melechko,
12
Jiandi Zhang, 3 Miroslaw Bartkowiak, 12 E. Ward
Plummer 12
Symmetry, dimensionality, and disorder play a
pivotal role in critical phenomena. The atomic
imaging capabilities of the scanning tunneling
microscope were used to directly visualize the
interaction between charge density oscillations
and lattice defects in a two-dimensional charge
density wave (CDW) system. Point defects act as
nucleation centers of the CDW, which, as the
temperature is lowered, results in the formation
of pinned CDW domains that are separated by
atomically abrupt charge boundaries. Incomplete
freezing of substitutional disorder at low
temperature indicates a novel CDW-mediated
hopping of pinning centers.
1 Department of Physics and Astronomy,
University of Tennessee, Knoxville, TN
37996, USA.
2 Solid State Division, Oak Ridge National
Laboratory, Oak Ridge, TN 37831, USA.
3 Department of Physics, Florida International
University, University Park, Miami, FL
33199, USA.
Cited by Record 1 of 56
Lobo, J; Farias, D; Hulpke, E; Michel, EG. 2005.
Phonon dynamics of the Sn/Ge(111) surface at
room temperature and low temperature determined
by helium-atom scattering. PHYSICAL REVIEW B 71
(20): art. no.-205402.
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Record 2 of 56
Maki, M; Nishizaki, T; Shibata, K; Kobayashi, N.
2005. Layered charge-density waves with
nanoscale coherence in YBa2Cu3O7-delta. PHYSICAL
REVIEW B 72 (2): art. no.-024536.
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Record 3 of 56
Cvetko, D; Ratto, F; Cossaro, A; Bavdek, G;
Morgante, A; Floreano, L. 2005. Displacive phase
transition at the 5/3 monolayer of Pb on
Ge(001). PHYSICAL REVIEW B 72 (4): art.
no.-045404.
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Record 4 of 56
Cybulski, O; Matysiak, D; Babin, V; Holyst, R.
2005. Pattern formation in nonextensive
thermodynamics: Selection criterion based on the
Renyi entropy production. JOURNAL OF CHEMICAL
PHYSICS 122 (17): art. no.-174105.
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Record 5 of 56
Hwang, IS; Chang, SH; Fang, CK; Chen, LJ; Tsong,
TT. 2005. Hydrogen-adsorption induced atomic
rearrangement of a Pb monolayer on Si(111).
PHYSICAL REVIEW LETTERS 94 (4): art. no.-045505.
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Record 6 of 56
Guo, JD; Shi, JR; Plummer, EW. 2005. Low
temperature disordered phase of alpha-Pb/Ge(111).
PHYSICAL REVIEW LETTERS 94 (3): art. no.-036105.
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Record 7 of 56
Escuadro, AA; Goodner, DM; Okasinski, JS; Bedzyk,
MJ. 2004. X-ray standing wave analysis of the Sn/Si(111)-root
3x root 3 surface. PHYSICAL REVIEW B 70 (23):
art. no.-235416.
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Record 8 of 56
Dudr, V; Tsud, N; Fabik, S; Vondracek, M;
Matolin, V; Chab, V; Prince, KC. 2004. Evidence
for valence-charge fluctuations in the root 3 x
root 3-Pb/Si(111) system. PHYSICAL REVIEW B 70
(15): art. no.-155334.
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Record 9 of 56
Farias, D; Kaminski, W; Lobo, J; Ortega, J;
Hulpke, E; Perez, R; Flores, F; Michel, EG.
2004. Phonon dynamics of the Sn/Ge(111)-(3 x 3)
surface. APPLIED SURFACE SCIENCE 237 (1-4):
86-92.
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Record 10 of 56
Lee, G; Yu, SY; Kim, H; Koo, JY. 2004.
Defect-induced perturbation on Si(111)4x1-In:
Period-doubling modulation and its origin.
PHYSICAL REVIEW B 70 (12): art. no.-121304.
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Record 11 of 56
Davila, ME; Avila, J; Ascolani, H; Le Lay, G;
Gothelid, M; Karlsson, UO; Asensio, MC. 2004.
Surface phase transitions at metal-semiconductor
interfaces: a revisit is needed. APPLIED SURFACE
SCIENCE 234 (1-4): 274-285.
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Record 12 of 56
Kaminski, W; Jelinek, P; Perez, R; Flores, F;
Ortega, J. 2004. Si-substitutional defects on
the alpha-Sn/Si(111)-(root 3 x root 3) surface.
APPLIED SURFACE SCIENCE 234 (1-4): 286-291.
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Record 13 of 56
Losovyj, YB; Yakovkin, IN; Jeong, HK; Wisbey, D;
Dowben, PA. 2004. Lattice-stiffening transition
in gadolinium chains on furrowed (112)surfaces.
JOURNAL OF PHYSICS-CONDENSED MATTER 16 (26):
4711-4724.
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Record 14 of 56
Fialkowski, M; Nowakowski, R; Holyst, R. 2004. A
morphological study of the formation of PdHx on
thin palladium films. JOURNAL OF PHYSICAL
CHEMISTRY B 108 (22): 7373-7376.
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Record 15 of 56
Losovyj, Y; Yakovkin, IN; Dowben, PA. 2004. The
development of the gadolinium surface state.
VACUUM 74 (2): 191-194.
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Record 16 of 56
Fialkowski, M; Grzeszczak, P; Nowakowski, R;
Holyst, R. 2004. Absorption of mercury in gold
films and its further desorption: Quantitative
morphological study of the surface patterns.
JOURNAL OF PHYSICAL CHEMISTRY B 108 (16):
5026-5030.
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Record 17 of 56
Okasinski, JS; Kim, C; Walko, DA; Bedzyk, MJ.
2004. Ray standing wave imaging of the 1/3
monolayer Sn/Ge-(111) surface. PHYSICAL REVIEW B
69 (4): art. no.-041401.
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Record 18 of 56
Shi, JR; Wu, B; Xie, XC; Plummer, EW; Zhang, ZY.
2003. Surface phase transitions induced by
electron mediated adatom-adatom interaction.
PHYSICAL REVIEW LETTERS 91 (7): art. no.-076103.
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Record 19 of 56
Farias, D; Kaminski, W; Lobo, J; Ortega, J;
Hulpke, E; Perez, R; Flores, F; Michel, EG.
2003. Phonon softening, chaotic motion, and
order-disorder transition in Sn/Ge(111).
PHYSICAL REVIEW LETTERS 91 (1): art. no.-016103.
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Record 20 of 56
Zhang, HM; Jemander, ST; Lin, N; Hansson, GV;
Uhrberg, RIG. 2003. Origin of 3 x 3 diffraction
on the Sn1-xSix/Si(111)root 3 x root 3 surface.
SURFACE SCIENCE 531 (1): 21-28.
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Record 21 of 56
Kim, YB; Millis, AJ. 2003. Residual resistivity
near a two-dimensional metamagnetic quantum
critical point. PHYSICAL REVIEW B 67 (8): art.
no.-085102.
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Record 22 of 56
Ast, CR; Hochst, H. 2003. Indication of
charge-density-wave formation in Bi(111).
PHYSICAL REVIEW LETTERS 90 (1): art. no.-016403.
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Record 23 of 56
Petersen, L; Ismail; Plummer, EW. 2002.
Defect-blurred two-dimensional phase transition.
PROGRESS IN SURFACE SCIENCE 71 (1-4): 1-29.
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Record 24 of 56
Brochard, S; Artacho, E; Custance, O; Brihuega,
I; Baro, AM; Soler, JM; Gomez-Rodriguez, JM.
2002. Ab initio calculations and scanning
tunneling microscopy experiments of the
Si(111)-(root 7/x root 3)-Pb surface. PHYSICAL
REVIEW B 66 (20): art. no.-205403.
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Record 25 of 56
Fialkowski, M; Holyst, R. 2002. Morphological
changes during the order-disorder transition in
the two- and three-dimensional systems of scalar
nonconserved order parameters. PHYSICAL REVIEW E
66 (4): art. no.-046121, Part 2.
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Record 26 of 56
Cho, JH; Oh, DH; Kleinman, L. 2002. Theoretical
study of Na adsorption on top of In chains on
the Si(111) surface. PHYSICAL REVIEW B 66 (7):
art. no.-075423.
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Record 27 of 56
Ortega, J; Perez, R; Jurczyszyn, L; Flores, F.
2002. Ge substitutional defects and the root 3 x
root 3 <-> 3 x 3 transition in alpha-Sn/Ge(111).
JOURNAL OF PHYSICS-CONDENSED MATTER 14 (30):
7147-7154.
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Record 28 of 56
Yeom, HW; Horikoshi, K; Zhang, HM; Ono, K;
Uhrberg, RIG. 2002. Nature of the
broken-symmetry phase of the one-dimensional
metallic In/Si(111) surface. PHYSICAL REVIEW B
65 (24): art. no.-241307.
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Record 29 of 56
Ortega, J; Perez, R; Flores, F. 2002. Dynamical
fluctuations and the root 3x root 3 <-> 3x3
transition in alpha-Sn/Ge(111) and Sn/Si(111).
JOURNAL OF PHYSICS-CONDENSED MATTER 14 (24):
5979-6004.
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Record 30 of 56
Fialkowski, M; Holyst, R. 2002. Morphology from
the maximum entropy principle: Domains in a
phase ordering system and a crack pattern in
broken glass. PHYSICAL REVIEW E 65 (5): art.
no.-057105, Part 2.
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Record 31 of 56
Ottaviano, L; Profeta, G; Petaccia, L; Santucci,
S; Pedio, M. 2002. Mechanism of the short range
ordering in a 2D binary alloy. SURFACE SCIENCE
501 (1-2): L171-L176.
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Record 32 of 56
Plummer, EW; Ismail; Matzdorf, R; Melechko, AV;
Pierce, JP; Zhang, JD. 2002. Surfaces: a
playground for physics with broken symmetry in
reduced dimensionality. SURFACE SCIENCE 500
(1-3): 1-27.
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Record 33 of 56
Lee, SS; Ahn, JR; Kim, ND; Min, JH; Hwang, CG;
Chung, JW; Yeom, HW; Ryjkov, SV; Hasegawa, S.
2002. Adsorbate-induced pinning of a
charge-density wave in a quasi-1D metallic
chains: Na on the In/Si(111)-(4 x 1) surface.
PHYSICAL REVIEW LETTERS 88 (19): art.
no.-196401.
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Record 34 of 56
Refolio, MC; Sancho, JML; Rubio, J. 2002.
Temperature-dependent gaps in the half-filled
Hubbard model on a triangular lattice. PHYSICAL
REVIEW B 65 (7): art. no.-075114.
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Record 35 of 56
Chiang, TC; Chou, MY; Kidd, T; Miller, T. 2002.
Fermi surfaces and energy gaps in Sn/Ge(111).
JOURNAL OF PHYSICS-CONDENSED MATTER 14 (1):
R1-R20.
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Record 36 of 56
Melechko, AV; Simkin, MV; Samatova, NF; Braun,
J; Plummer, EW. 2001. Complex structural phase
transition in a defect-populated two-dimensional
system. PHYSICAL REVIEW B 64 (23): art.
no.-235424.
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Record 37 of 56
Petaccia, L; Floreano, L; Goldoni, A; Cvetko, D;
Morgante, A; Grill, L; Verdini, A; Comelli, G;
Paolucci, G; Modesti, S. 2001. Order-disorder
character of the (3X3) to (root 3X root 3)R30
degrees phase transition of Sn on Ge(111).
PHYSICAL REVIEW B 64 (19): art. no.-193410.
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Record 38 of 56
Millis, AJ; Morr, DK; Schmalian, J. 2001. Local
defect in metallic quantum critical systems.
PHYSICAL REVIEW LETTERS 8716 (16): art.
no.-167202.
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Record 39 of 56
Xie, F; von Blanckenhagen, P; Wu, J; Liu, JW;
Zhang, QZ; Chen, YC; Wang, EG. 2001.
Contamination of Si surfaces in ultrahigh vacuum
and formation of SiC islands. APPLIED SURFACE
SCIENCE 181 (1-2): 139-144.
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Record 40 of 56
Floreano, L; Cvetko, D; Bavdek, G; Benes, M;
Morgante, A. 2001. Order-disorder transition of
the (3X3) Sn/Ge(111) phase. PHYSICAL REVIEW B 64
(7): art. no.-075405.
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Record 41 of 56
Swamy, K; Menzel, A; Beer, R; Deisl, C; Penner,
S; Bertel, E. 2001. Low-dimensional systems on
self-structured metal surfaces. SURFACE SCIENCE
482: 402-412, Part 1.
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Record 42 of 56
Refolio, MC; Sancho, JML; Rubio, J. 2001.
Quantum Monte Carlo simulation of the triangular
lattice in the repulsive Hubbard model. SURFACE
SCIENCE 482: 632-639, Part 1.
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Record 43 of 56
Custance, O; Gomez-Rodriguez, JM; Baro, AM;
Jure, L; Mallet, P; Veuillen, JY. 2001. Low
temperature phases of Pb/Si(111). SURFACE
SCIENCE 482: 1399-1405, Part 2.
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Record 44 of 56
Plummer, EW; Ismail; Matzdorf, R; Melechko, AV;
Zhang, JD. 2001. The next 25 years of surface
physics. PROGRESS IN SURFACE SCIENCE 67 (1-8):
17-44.
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Record 45 of 56
Flores, F; Ortega, J; Perez, R; Charrier, A;
Thibaudau, F; Debever, JM; Themlin, JM. 2001.
Electron correlation effects at Sn/Si(111)-3x3,
root 3x root 3 and Sn/Ge(111)-3x3, root 3x root
3 reconstructions. PROGRESS IN SURFACE SCIENCE
67 (1-8): 299-307.
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Record 46 of 56
Perez, R; Ortega, J; Flores, F. 2001. Surface
soft phonon and the root 3 x root 3 <-> 3 x 3
phase transition in Sn/Ge(III) and Sn/Si(III).
PHYSICAL REVIEW LETTERS 86 (21): 4891-4894.
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Record 47 of 56
Rad, MG; Gothelid, M; Le Lay, G; Karlsson, UO;
Grehk, TM; Sandell, A. 2001. Influence of
charged impurities on the surface phases of Sn/Ge(111).
SURFACE SCIENCE 477 (2-3): 227-234.
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Record 48 of 56
Petaccia, L; Floreano, L; Benes, M; Cvetko, D;
Goldoni, A; Grill, L; Morgante, A; Verdini, A;
Modesti, S. 2001. Determination of the (3 x
3)-Sn/Ge(111) structure by photoelectron
diffraction. PHYSICAL REVIEW B 63 (11): art.
no.-115406.
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Record 49 of 56
Jemander, ST; Lin, N; Zhang, HM; Uhrberg, RIG;
Hansson, GV. 2001. An STM study of the surface
defects of the (root 3 x root 3)-Sn/Si(111)
surface. SURFACE SCIENCE 475 (1-3): 181-193.
Ottaviano, L; Melechko, AV; Santucci, S;
Plummer, EW. 2001. Direct visualization of
defect density waves in 2D. PHYSICAL REVIEW
LETTERS 86 (9): 1809-1812.
Record 51 of 56
Swamy, K; Menzel, A; Beer, R; Bertel, E. 2001.
Charge-density waves in self-assembled
halogen-bridged metal chains. PHYSICAL REVIEW
LETTERS 86 (7): 1299-1302.
Dowben, PA. 2000. The metallicity of thin films
and overlayers. SURFACE SCIENCE REPORTS 40
(6-8): 151-245.
Kidd, TE; Miller, T; Chou, MY; Chiang, TC. 2000.
Sn/Ge(111) surface charge-density-wave phase
transition. PHYSICAL REVIEW LETTERS 85 (17):
3684-3687.
Uhrberg, RIG; Zhang, HM; Balasubramanian, T;
Jemander, ST; Lin, N; Hansson, GV. 2000.
Electronic structure of Sn/Si(111) root 3X root
3: Indications of a low-temperature phase.
PHYSICAL REVIEW B 62 (12): 8082-8086.
Uhrberg, RIG; Zhang, HM; Balasubramanian, T.
2000. Determination of the Sn 4d line shape of
the Sn/Ge(111) root 3 x root 3 and 3 x 3
surfaces. PHYSICAL REVIEW LETTERS 85 (5):
1036-1039.
Melechko, AV; Braun, J; Weitering, HH; Plummer,
EW. 2000. Role of defects in two-dimensional
phase transitions: An STM study of the Sn/Ge(111)
system. PHYSICAL REVIEW B 61 (3): 2235-2245. |
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